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APW8703
Active
High-Performance, High-Current DrMOS Power Module
Features
General Description
The APW8703 integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive deadtime control. The APW8703 have a built-in tri-state PWM input function which can support a number of PWM controllers. When the PWM input signal stays tri-state, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8703 also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
Features
- 4.5V ~ 5.5V Input Range for VCC & PVCC
- 4.5V ~ 25V Input Range for VIN
- Power-On-Reset Monitoring on VCC Pin
- Up to 10A (peak), 8A (continuous) output current scale
- Adjustable Over-Current Protection Threshold
- Up to 1.5MHz PWM operation
- Built-in Tri-State PWM input Function
- Built in EN Timing Control function
- Buildin N-CH MOSFETforhighside, N-CH MOSFET for low side
- Skip Mode Operation
- Over-Temperature Protection
- TQFN 4x4-23 package
- Lead Free and Green Devices Available (RoHS Compliant)
General Description
The APW8703 integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive deadtime control. The APW8703 have a built-in tri-state PWM input function which can support a number of PWM controllers. When the PWM input signal stays tri-state, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8703 also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
APW8706
Active
High-Performance, High-Current DrMOS Power Module
Features
General Description
The APW8706 integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive deadtime control. The APW8706 have a built-in tri-state PWM input function which can support a number of PWM controllers. When the PWM input signal stays tri-state, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8706 also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
Features
- 4.5V ~ 5.5V Input Range for VCC & PVCC
- 4.5V ~ 25V Input Range for VIN
- Power-On-Reset Monitoring on VCC Pin
- Up to 8A (peak), 6A (continuous) output current scale
- Adjustable Over-Current Protection Threshold
- Up to 1.5MHz PWM operation
- Built-in Tri-State PWM input Function
- Built in EN Timing Control function
- Buildin N-CH MOSFETforhighside, N-CH MOSFET for low side
- Skip Mode Operation
- Over-Temperature Protection
- TQFN 4x4-23 package
- Lead Free and Green Devices Available (RoHS Compliant)
General Description
The APW8706 integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive deadtime control. The APW8706 have a built-in tri-state PWM input function which can support a number of PWM controllers. When the PWM input signal stays tri-state, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8706 also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
APW8706A
Active
High-Performance, High-Current DrMOS Power Module
Features
General Description
The APW8706A integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive dead-time control. The APW8706A have a built-in tristate PWM input function which can support a number of PWM controllers. When the PWM input signal stays tristate, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8706A also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
Features
- 4.5V ~ 5.5V Input Range for VCC & PVCC
- 4.5V ~ 25V Input Range for VIN
- Power-On-Reset Monitoring on VCC Pin
- Up to 8A (peak), 6A (continuous) output current scale
- Adjustable Over-Current Protection Threshold
- Up to 1.5MHz PWM operation
- Built-in Tri-State PWM input Function
- Built in EN Timing Control function
- Buildin N-CH MOSFETforhighside, N-CH MOSFET for low side
- Skip Mode Operation
- Over-Temperature Protection
- TQFN 4x4-23 package
- Lead Free and Green Devices Available (RoHS Compliant)
General Description
The APW8706A integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive dead-time control. The APW8706A have a built-in tristate PWM input function which can support a number of PWM controllers. When the PWM input signal stays tristate, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8706A also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
APW8707
Active
High-Performance, High-Current DrMOS Power Module
Features
General Description
The APW8707 integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive deadtime control. The APW8707 have a built-in tri-state PWM input function which can support a number of PWM controllers. When the PWM input signal stays tri-state, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8707 also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
Features
- 4.5V ~ 5.5V Input Range for VCC
- 4.5V ~ 25V Input Range for VIN
- Power-On-Reset Monitoring on VCC Pin
- Up to 25A (peak), 13A (continuous) output current scale
- Adjustable Over-Current Protection Threshold
- Up to 1.5MHz PWM operation
- Built-in Tri-State PWM input Function
- Built in EN Timing Control function
- Buildin N-CH MOSFETforhighside, N-CH MOSFET for low side
- Skip Mode Operation
- Over-Temperature Protection
- TQFN 5x5-30 package
- Lead Free and Green Devices Available (RoHS Compliant)
General Description
The APW8707 integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive deadtime control. The APW8707 have a built-in tri-state PWM input function which can support a number of PWM controllers. When the PWM input signal stays tri-state, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8707 also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
APW8707A
Active
High-Performance, High-Current DrMOS Power Module
Features
General Description
The APW8707A integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive dead-time control. The APW8707A have a built-in tristate PWM input function which can support a number of PWM controllers. When the PWM input signal stays tristate, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8707A also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
Features
- 4.5V ~ 5.5V Input Range for VCC
- 4.5V ~ 25V Input Range for VIN
- Power-On-Reset Monitoring on VCC Pin
- Up to 25A (peak), 13A (continuous) output current scale
- Adjustable Over-Current Protection Threshold
- Up to 1.5MHz PWM operation
- Built-in Tri-State PWM input Function
- Built in EN Timing Control function
- Buildin N-CH MOSFETforhighside, N-CH MOSFET for low side
- Skip Mode Operation
- Over-Temperature Protection
- TQFN 5x5-30 package
- Lead Free and Green Devices Available (RoHS Compliant)
General Description
The APW8707A integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive dead-time control. The APW8707A have a built-in tristate PWM input function which can support a number of PWM controllers. When the PWM input signal stays tristate, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8707A also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
APW8707B
Active
High-Performance, High-Current DrMOS Power Module
Features
General Description
The APW8707B integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive dead-time control. The APW8707B have a built-in tristate PWM input function which can support a number of PWM controllers. When the PWM input signal stays tristate, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8707B also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
Features
- 4.5V ~ 5.5V Input Range for VCC
- 4.5V ~ 25V Input Range for VIN
- Power-On-Reset Monitoring on VCC Pin
- Up to 25A (peak), 13A (continuous) output current scale
- Adjustable Over-Current Protection Threshold
- Adjustable Debounce Time of OCP
- Up to 1.5MHz PWM operation
- Built-in Tri-State PWM input Function
- Built in EN Timing Control function
- Buildin N-CH MOSFETforhighside, N-CH MOSFET for low side
- Skip Mode Operation
- Over-Temperature Protection
- TQFN 5x5-30 package
- Lead Free and Green Devices Available (RoHS Compliant)
General Description
The APW8707B integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive dead-time control. The APW8707B have a built-in tristate PWM input function which can support a number of PWM controllers. When the PWM input signal stays tristate, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8707B also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
