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Part Number Package & Pins Vin (V)-min Vin (V)-max R-Top (mΩ) R-Sync (mΩ) Iq (No load) (μA) EN PSM/CCM Pin OCB Max. Iout (A) Switching Frequency (kHz)
ALL
APW8703 TQFN4x4-23P 4.5 25 25 7 90 Yes Yes Yes 8 1500
APW8706 TQFN4x4-23P 4.5 25 30 12 90 Yes Yes Yes 6 1500
APW8706A TQFN4x4-23P 4.5 25 30 12 90 Yes Yes Yes 6 1500
APW8707 TQFN5x5-30 4.5 25 9.7 5.2 90 Yes Yes Yes 13 1500
APW8707A TQFN5x5-30 4.5 25 8 4.5 90 Yes Yes Yes 15 1500
APW8707B TQFN5x5-30 4.5 25 8 4.5 90 Yes Yes Yes 15 1500
APW8703
Active
High-Performance, High-Current DrMOS Power Module

Features
  • 4.5V ~ 5.5V Input Range for VCC & PVCC
  • 4.5V ~ 25V Input Range for VIN
  • Power-On-Reset Monitoring on VCC Pin
  • Up to 10A (peak), 8A (continuous) output current scale
  • Adjustable Over-Current Protection Threshold
  • Up to 1.5MHz PWM operation
  • Built-in Tri-State PWM input Function
  • Built in EN Timing Control function
  • Buildin N-CH MOSFETforhighside, N-CH MOSFET for low side
  • Skip Mode Operation
  • Over-Temperature Protection
  • TQFN 4x4-23 package
  • Lead Free and Green Devices Available (RoHS Compliant)

General Description
The APW8703 integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive deadtime control. The APW8703 have a built-in tri-state PWM input function which can support a number of PWM controllers. When the PWM input signal stays tri-state, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8703 also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
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APW8706
Active
High-Performance, High-Current DrMOS Power Module

Features
  • 4.5V ~ 5.5V Input Range for VCC & PVCC
  • 4.5V ~ 25V Input Range for VIN
  • Power-On-Reset Monitoring on VCC Pin
  • Up to 8A (peak), 6A (continuous) output current scale
  • Adjustable Over-Current Protection Threshold
  • Up to 1.5MHz PWM operation
  • Built-in Tri-State PWM input Function
  • Built in EN Timing Control function
  • Buildin N-CH MOSFETforhighside, N-CH MOSFET for low side
  • Skip Mode Operation
  • Over-Temperature Protection
  • TQFN 4x4-23 package
  • Lead Free and Green Devices Available (RoHS Compliant)

General Description
The APW8706 integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive deadtime control. The APW8706 have a built-in tri-state PWM input function which can support a number of PWM controllers. When the PWM input signal stays tri-state, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8706 also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
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APW8706A
Active
High-Performance, High-Current DrMOS Power Module

Features
  • 4.5V ~ 5.5V Input Range for VCC & PVCC
  • 4.5V ~ 25V Input Range for VIN
  • Power-On-Reset Monitoring on VCC Pin
  • Up to 8A (peak), 6A (continuous) output current scale
  • Adjustable Over-Current Protection Threshold
  • Up to 1.5MHz PWM operation
  • Built-in Tri-State PWM input Function
  • Built in EN Timing Control function
  • Buildin N-CH MOSFETforhighside, N-CH MOSFET for low side
  • Skip Mode Operation
  • Over-Temperature Protection
  • TQFN 4x4-23 package
  • Lead Free and Green Devices Available (RoHS Compliant)

General Description
The APW8706A integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive dead-time control. The APW8706A have a built-in tristate PWM input function which can support a number of PWM controllers. When the PWM input signal stays tristate, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8706A also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
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APW8707
Active
High-Performance, High-Current DrMOS Power Module

Features
  • 4.5V ~ 5.5V Input Range for VCC
  • 4.5V ~ 25V Input Range for VIN
  • Power-On-Reset Monitoring on VCC Pin
  • Up to 25A (peak), 13A (continuous) output current scale
  • Adjustable Over-Current Protection Threshold
  • Up to 1.5MHz PWM operation
  • Built-in Tri-State PWM input Function
  • Built in EN Timing Control function
  • Buildin N-CH MOSFETforhighside, N-CH MOSFET for low side
  • Skip Mode Operation
  • Over-Temperature Protection
  • TQFN 5x5-30 package
  • Lead Free and Green Devices Available (RoHS Compliant)

General Description
The APW8707 integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive deadtime control. The APW8707 have a built-in tri-state PWM input function which can support a number of PWM controllers. When the PWM input signal stays tri-state, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8707 also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
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APW8707A
Active
High-Performance, High-Current DrMOS Power Module

Features
  • 4.5V ~ 5.5V Input Range for VCC
  • 4.5V ~ 25V Input Range for VIN
  • Power-On-Reset Monitoring on VCC Pin
  • Up to 25A (peak), 13A (continuous) output current scale
  • Adjustable Over-Current Protection Threshold
  • Up to 1.5MHz PWM operation
  • Built-in Tri-State PWM input Function
  • Built in EN Timing Control function
  • Buildin N-CH MOSFETforhighside, N-CH MOSFET for low side
  • Skip Mode Operation
  • Over-Temperature Protection
  • TQFN 5x5-30 package
  • Lead Free and Green Devices Available (RoHS Compliant)

General Description
The APW8707A integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive dead-time control. The APW8707A have a built-in tristate PWM input function which can support a number of PWM controllers. When the PWM input signal stays tristate, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8707A also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
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APW8707B
Active
High-Performance, High-Current DrMOS Power Module

Features
  • 4.5V ~ 5.5V Input Range for VCC
  • 4.5V ~ 25V Input Range for VIN
  • Power-On-Reset Monitoring on VCC Pin
  • Up to 25A (peak), 13A (continuous) output current scale
  • Adjustable Over-Current Protection Threshold
  • Adjustable Debounce Time of OCP
  • Up to 1.5MHz PWM operation
  • Built-in Tri-State PWM input Function
  • Built in EN Timing Control function
  • Buildin N-CH MOSFETforhighside, N-CH MOSFET for low side
  • Skip Mode Operation
  • Over-Temperature Protection
  • TQFN 5x5-30 package
  • Lead Free and Green Devices Available (RoHS Compliant)

General Description
The APW8707B integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive dead-time control. The APW8707B have a built-in tristate PWM input function which can support a number of PWM controllers. When the PWM input signal stays tristate, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset (POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The APW8707B also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
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